Abstract Submitted to the NANOTUBE'02 Workshop:

We have fabricated single-wall carbon nanotube field effect transistors in a conventional MOSFET structure, with gate electrodes above the conduction channel separated from the channel by a thin dielectric. We use these devices to study the performance improvements achieved by reducing the gate-to-channel separation. In addition to offering certain structural advantages over back gated devices, these top gate devices exhibit excellent electrical characteristics, including steep subthreshold slope and high transconductance, at gate voltages close to 1 V. The measured device characteristics are significantly better than previously reported carbon nanotube devices, and they also compare very well to state-of-the-art silicon devices.