Abstract Submitted to the NANOTUBE'02 Workshop:

A carbon nanotube, synthesized by arc-discharge technique and purified by size exclusion chromatography method was deposited on the SiO2/Si chip(300nm SiO2 layer). Carbon nanotubes were coordinated by AFM images and contacted with Au defined by conventional electron beam lithography. Direct gate voltage modulation experiments were established. Voltage - current characteristics were measured from room temperature to low temperature (300K~1.8K) with and without gate voltage. Below 10K, coulomb gap was shown at zero gate voltage and coulomb oscillation was also observed at various gate voltages. Oscillation period was estimated using contour of dI/dV at given gate bias. We have studied the relation of coulomb interaction and contact resistance. To analyze these differences, impedance spectroscopy in the frequency range from 1MHz to 13MHz were established. From the impedance spectroscopy, capacitance and resistance can be developed at given frequency. We have observed resistance variation depends on the oscillation level from 10mV to 1V.