Localization in carbon nanotubes
T. Kostyrko1,2, M. Bartkowiak1,2 and G.D. Mahan1We analyze the influence of defects on conductance, density of states, and localization in (N,N) armchair carbon nanotubes within a tight binding model. Using the transfer matrix method, we calculate the reflection (related to the conductance) from a sequence of defects and relate its energy dependence near the Fermi level to the appearance of a quasibound state. This state is also seen in the density of states and in the energy dependence of the quasiparticle lifetime. We compute the localization length x(w) as a function of energy w. Comparison of x(0) with the mean free path L in the limit of small defect concentration c and small defect strength E leads to a simple approximate relation x(0) = 3L = 9aNt2/2cE2 (t - hopping integral, a - lattice constant).
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