D.4
Log Number: 41
Abstract Submitted to the NT-99-Logo NANOTUBE-99 Workshop:

Controlled Growth of Individual Carbon Nanotubes

Z. P. Huang, D. Z. Wang, J.G. Wen, Z. F. Ren, J. H. Wang, L. E. Calvet, J. Chen, J. F. Klemic, M. A. Reed

Departmant of Physics, Boston College, Chestnut Hill, MA 02167
Contact e-mail: zphuang@acsu.baffalo.edu

Controlled growth of individual multi-wall carbon nanotubes on submicron nickel dots on silicon have been achieved by plasma enhanced hot filament chemical vapor deposition (PEHFCVD). A 100 nm thickness and diameter of nickel dot array was fabricated by standard electron beam potolithograghic techniques. PEHFCVD was done using a acetylene (C2H2) gas as the carbon source and ammonia (NH3) as a catalyst and dilution gas. 1, 2, 5 mm spacing well-separated single carbon nanotubes were observed.

The single nanotube had rounded base diameter of approximately 150 nm, heights ranging from 0.1 to 5mm and sharp tip radii below 10 nm. The height depend on the growth time. This nanotube growth process is compatible with integrated circuit processing. Therefore, it is a extremely promising method to fabricate field emission devices, sensors and scanning probe microscopy.

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Last modification:   2020.07.24 (Friday) 20:31:13 EDT