G.9
Log Number: 52
Abstract Submitted to the NT-99-Logo NANOTUBE-99 Workshop:

Systematic Transport Studies of Various Classes of Individual Singled-Walled Carbon Nanotubes

Chongwu Zhou, Jing Kong, Hongjie Dai

Department of Chemistry, Stanford University, Stanford, CA 94305
Contact e-mail: chongwu@leland.stanford.edu

We present systematic results of transport properties of individual SWNTs. By synthesizing SWNTs at desired surface sites and controlled metal contacting we obtain large numbers of individual SWNTs for detailed electrical measurements. I will first focus on semiconductive SWNTs and present the realization of high gain SWNT transistors at room temperature. The temperature dependence of the I-V characteristics will be presented to elucidate the energy gap size, the relative Fermi level position and their dependence on the tube diameter. I will also present the first experimental observation of curvature induced energy gap in small diameter semi-metallic tubes. Finally, truly metallic armchair tubes will be shown to exhibit resistance as low as ~10 kOhm at 4 K.

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