@article{DT231,
  title = {High Mobility WSe$_2$ p- and n-Type Field Effect
           Transistors Contacted by Highly Doped Graphene for
           Low-Resistance Contacts},
  author = {Chuang, Hsun-Jen and Tan, Xuebin and
            Ghimire, Nirmal Jeevi and Perera, Meeghage Madusanka and
            Chamlagain, Bhim and Cheng, Mark Ming-Cheng and
            Yan, Jiaqiang and Mandrus, David and
            Tom\'{a}nek, David and Zhou, Zhixian},
  journal = {Nano Lett.},
  volume = {14},
  number = {},
  pages = {3594--3601},
  numpages = {8},
  year = {2014},
  doi = {10.1021/nl501275p},
  url = {http://pubs.acs.org/doi/abs/10.1021/nl501275p},
  publisher = {American Chemical Society}
}